Study programme | Français | ||
Electronics Devices and Technologies | |||
Programme component of Bachelor's Degree in Engineering à la Faculty of Engineering |
Code | Type | Head of UE | Department’s contact details | Teacher(s) |
---|---|---|---|---|
UI-B3-IRCIVI-207-M | Compulsory UE | DUALIBE Fortunato | F109 - Electronique et Microélectronique |
|
Language of instruction | Language of assessment | HT(*) | HTPE(*) | HTPS(*) | HR(*) | HD(*) | Credits | Weighting | Term |
---|---|---|---|---|---|---|---|---|---|
| Français | 26 | 22 | 0 | 0 | 0 | 4.00 | 4.00 |
AA Code | Teaching Activity (AA) | HT(*) | HTPE(*) | HTPS(*) | HR(*) | HD(*) | Term | Weighting |
---|---|---|---|---|---|---|---|---|
I-SEMI-020 | Electronic Devices and Technologies | 26 | 22 | 0 | 0 | 0 | Q2 | 100.00% |
Unité d'enseignement | ||
---|---|---|
UI-B3-IRCIVI-001-M Electronique fonctionnelle |
Objectives of Programme's Learning Outcomes
Learning Outcomes of UE
To understand the physics and working principle of basic electronics components like: the junction Diode, the MOS and Bipolar transistors, to get a mathematical and intuitive approach to fundamental equations of electricity and quantum mechanics , to identify main semiconductors device parameters and to understand their relationships, to analyze and understand different elementary circuits based on discrete components like diodes, transistors, resistances and capacitors, to simulate circuits in Spice-like simulators, to put in practice simplified analysis techniques based on the decomposition of a problem into a DC and AC individual circuits analysis, to understand the integrated circuit design flow through the use of specialized microelectronics CAD.
Content of UE
PN junction at equilibrium and biased, diode model, MOS transistor, MOS capacitor, short channel effects, MOS models, Bipolar transistors fundamentals, Ebers et Moll models, transport model, courant equations, small and grand signal devices models; transistors fundamental stages, two transistors stages, current mirrors. Advances electronics devices. Introduction to microelectronics, Microelectronics technologies, integrated circuits design flow through specialized CAD tools
Prior Experience
-Fields, signals and systems, BA2 -Electronique fonctionnelle BA3
Type of Assessment for UE in Q1
Q1 UE Assessment Comments
Not applicable
Type of Assessment for UE in Q2
Q2 UE Assessment Comments
-Practical works in lab (maximum 8 groups composed by 3 students each ; technical report to fill at each session) plus final lab examination: 15% -Quoted exercises (3 hours examination) : 50% -Oral examination: 35% Eventually, students can choose to do a project and to defend it instead of the oral examination. In this case : -Quoted exercises (3 hours examination) : 45% -Oral examination: 40%
Type of Assessment for UE in Q3
Q3 UE Assessment Comments
Weighting -Quoted exercises (3 hours examination) : 55% -Oral examination: 45%
Type of Resit Assessment for UE in Q1 (BAB1)
Q1 UE Resit Assessment Comments (BAB1)
Not applicable
Type of Teaching Activity/Activities
AA | Type of Teaching Activity/Activities |
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I-SEMI-020 |
|
Mode of delivery
AA | Mode of delivery |
---|---|
I-SEMI-020 |
|
Required Reading
AA | |
---|---|
I-SEMI-020 |
Required Learning Resources/Tools
AA | Required Learning Resources/Tools |
---|---|
I-SEMI-020 | Not applicable |
Recommended Reading
AA | |
---|---|
I-SEMI-020 |
Recommended Learning Resources/Tools
AA | Recommended Learning Resources/Tools |
---|---|
I-SEMI-020 | Not applicable |
Other Recommended Reading
AA | Other Recommended Reading |
---|---|
I-SEMI-020 | Not applicable |
Grade Deferrals of AAs from one year to the next
AA | Grade Deferrals of AAs from one year to the next |
---|---|
I-SEMI-020 | Autorisé |