Study programme | Français | ||
Electronic Devices and Technologies | |||
Activité d'apprentissage à la Faculty of Engineering |
Code | Lecturer(s) | Associate Lecturer(s) | Subsitute Lecturer(s) et other(s) |
---|---|---|---|
I-SEMI-020 |
|
Language of instruction | Language of assessment | HT(*) | HTPE(*) | HTPS(*) | HR(*) | HD(*) | Term |
---|---|---|---|---|---|---|---|
Français | Français | 26 | 22 | 0 | 0 | 0 | Q2 |
Content of Learning Activity
PN junction at equilibrium and biased, diode model, MOS transistor, MOS capacitor, short channel effects, MOS models, Bipolar transistors fundamentals, Ebers et Moll models, transport model, courant equations, small and grand signal devices models; transistors fundamental stages, two transistors stages, current mirrors. Advances electronics devices. Introduction to microelectronics, Microelectronics technologies, integrated circuits design flow through specialized CAD tools
Required Learning Resources/Tools
Not applicable
Recommended Learning Resources/Tools
Not applicable
Other Recommended Reading
Not applicable
Mode of delivery
Type of Teaching Activity/Activities
Evaluations
The assessment methods of the Learning Activity (AA) are specified in the course description of the corresponding Educational Component (UE)